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Artigo de periodico
Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures (2005)
Lima, Ivan Costa da Cunha; Rodrigues, S C P; Sipahi, Guilherme Matos; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Journal of Superconductivity. Unidades: IFSC, IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
LIMA, Ivan Costa da Cunha et al. Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. Journal of Superconductivity, v. 18. n. 1, p. 61-67, 2005Tradução . . Disponível em: http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf. Acesso em: 27 abr. 2024.
APA
Lima, I. C. da C., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2005). Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. Journal of Superconductivity, 18. n. 1, 61-67. Recuperado de http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf
NLM
Lima IC da C, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures [Internet]. Journal of Superconductivity. 2005 ; 18. n. 1 61-67.[citado 2024 abr. 27 ] Available from: http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf
Vancouver
Lima IC da C, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures [Internet]. Journal of Superconductivity. 2005 ; 18. n. 1 61-67.[citado 2024 abr. 27 ] Available from: http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf
Artigo de periodico-carta/editorial
Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] (2005)
Silva Junior, E. F. da; Henini, M; Scolfaro, Luisa Maria Ribeiro; Sipahi, Guilherme Matos
Source: Microelectronics Journal. Unidades: IF, IFSC
Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, NANOTECNOLOGIA, ESTRUTURA DOS MATERIAIS
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ABNT
SILVA JUNIOR, E. F. da et al. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 27 abr. 2024. , 2005
APA
Silva Junior, E. F. da, Henini, M., Scolfaro, L. M. R., & Sipahi, G. M. (2005). Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
NLM
Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2024 abr. 27 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Vancouver
Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2024 abr. 27 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Trabalho de evento-anais periodico
Design of InGaN/AlInGaN superlattices for white-light device applications (2005)
Rodrigues, S. C. P.; D'Eurydice, Marcel Nogueira; Sipahi, Guilherme Matos; Silva Junior, E. F.
Source: Microelectronics Journal. Conference titles: Workshop of Semiconductor Nanodevices and Nanostructured Materials - NanoSemiMat. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
RODRIGUES, S. C. P. et al. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. Oxford: Elsevier Science. . Acesso em: 27 abr. 2024. , 2005
APA
Rodrigues, S. C. P., D'Eurydice, M. N., Sipahi, G. M., & Silva Junior, E. F. (2005). Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. Oxford: Elsevier Science.
NLM
Rodrigues SCP, D'Eurydice MN, Sipahi GM, Silva Junior EF. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. 2005 ; No 2005( 11): 1002-1005.[citado 2024 abr. 27 ]
Vancouver
Rodrigues SCP, D'Eurydice MN, Sipahi GM, Silva Junior EF. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. 2005 ; No 2005( 11): 1002-1005.[citado 2024 abr. 27 ]
Artigo de periodico
Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers (2004)
Sipahi, Guilherme Matos; Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO, ESTRUTURA ELETRÔNICA
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ABNT
SIPAHI, Guilherme Matos et al. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, v. 85, n. 25, p. 6209-6211, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1840121. Acesso em: 27 abr. 2024.
APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & Lima, I. C. da C. (2004). Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, 85( 25), 6209-6211. doi:10.1063/1.1840121
NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1063/1.1840121
Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1063/1.1840121
Artigo de periodico
Charge and spin distributions in 'Ga IND.1-x''Mn IND.x'/ GaAs ferromagnetic multilayers (2004)
Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Lima, Ivan C. da Cunha; Sipahi, Guilherme Matos; Boselli, M. A.
Source: Physical Review B. Unidades: IF, IFSC
Subjects: SEMICONDUTORES, FERROMAGNETISMO
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ABNT
RODRIGUES, S. C. P. et al. Charge and spin distributions in 'Ga IND.1-x''Mn IND.x'/ GaAs ferromagnetic multilayers. Physical Review B, v. 70, n. 16, p. 165308-1-165308-8, 2004Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/6d310864-0e79-4e55-b73e-3d7f155a8cdd/Charge%20and%20spin%20distributions%20in%20Ga1%E2%88%92xMnxAs_GaAs%20ferromagnetic%20multilayers.pdf. Acesso em: 27 abr. 2024.
APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., Lima, I. C. da C., Sipahi, G. M., & Boselli, M. A. (2004). Charge and spin distributions in 'Ga IND.1-x''Mn IND.x'/ GaAs ferromagnetic multilayers. Physical Review B, 70( 16), 165308-1-165308-8. Recuperado de https://repositorio.usp.br/directbitstream/6d310864-0e79-4e55-b73e-3d7f155a8cdd/Charge%20and%20spin%20distributions%20in%20Ga1%E2%88%92xMnxAs_GaAs%20ferromagnetic%20multilayers.pdf
NLM
Rodrigues SCP, Scolfaro LMR, Leite JR, Lima IC da C, Sipahi GM, Boselli MA. Charge and spin distributions in 'Ga IND.1-x''Mn IND.x'/ GaAs ferromagnetic multilayers [Internet]. Physical Review B. 2004 ; 70( 16): 165308-1-165308-8.[citado 2024 abr. 27 ] Available from: https://repositorio.usp.br/directbitstream/6d310864-0e79-4e55-b73e-3d7f155a8cdd/Charge%20and%20spin%20distributions%20in%20Ga1%E2%88%92xMnxAs_GaAs%20ferromagnetic%20multilayers.pdf
Vancouver
Rodrigues SCP, Scolfaro LMR, Leite JR, Lima IC da C, Sipahi GM, Boselli MA. Charge and spin distributions in 'Ga IND.1-x''Mn IND.x'/ GaAs ferromagnetic multilayers [Internet]. Physical Review B. 2004 ; 70( 16): 165308-1-165308-8.[citado 2024 abr. 27 ] Available from: https://repositorio.usp.br/directbitstream/6d310864-0e79-4e55-b73e-3d7f155a8cdd/Charge%20and%20spin%20distributions%20in%20Ga1%E2%88%92xMnxAs_GaAs%20ferromagnetic%20multilayers.pdf
Artigo de periodico
Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells (2002)
Rodrigues, S C P; Sipahi, Guilherme Matos
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
RODRIGUES, S C P e SIPAHI, Guilherme Matos. Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells. Journal of Crystal Growth, v. 246, n. 3-4, p. 347-354, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)01760-8. Acesso em: 27 abr. 2024.
APA
Rodrigues, S. C. P., & Sipahi, G. M. (2002). Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells. Journal of Crystal Growth, 246( 3-4), 347-354. doi:10.1016/s0022-0248(02)01760-8
NLM
Rodrigues SCP, Sipahi GM. Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells [Internet]. Journal of Crystal Growth. 2002 ;246( 3-4): 347-354.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/s0022-0248(02)01760-8
Vancouver
Rodrigues SCP, Sipahi GM. Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells [Internet]. Journal of Crystal Growth. 2002 ;246( 3-4): 347-354.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/s0022-0248(02)01760-8
Artigo de periodico
Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices (2001)
Rodrigues, S C P; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Journal of Physics:Condensed Matter. Unidades: IFSC, IF
Subjects: MATÉRIA CONDENSADA, MECÂNICA ESTATÍSTICA
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ABNT
RODRIGUES, S C P et al. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices. Journal of Physics:Condensed Matter, v. 13, p. 3381-3387, 2001Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/13/14/311. Acesso em: 27 abr. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices. Journal of Physics:Condensed Matter, 13, 3381-3387. doi:10.1088/0953-8984/13/14/311
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices [Internet]. Journal of Physics:Condensed Matter. 2001 ; 13 3381-3387.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1088/0953-8984/13/14/311
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.x''Ga IND.1-x'N/GaN superlattices [Internet]. Journal of Physics:Condensed Matter. 2001 ; 13 3381-3387.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1088/0953-8984/13/14/311
Artigo de periodico
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells (2001)
Rodrigues, S C P; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physica B. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells. Physica B, v. 302-303, p. 106-113, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(01)00413-6. Acesso em: 27 abr. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells. Physica B, 302-303, 106-113. doi:10.1016/s0921-4526(01)00413-6
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells [Internet]. Physica B. 2001 ;302-303 106-113.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/s0921-4526(01)00413-6
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells [Internet]. Physica B. 2001 ;302-303 106-113.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/s0921-4526(01)00413-6

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